Research on the heavily doped n- type monocrystalline silicon (CSi) to generate porous silicon (PSi) in hydrofluoric acid system electrochemical behavior of the linear polarization curves, select a different current densities, galvanostatic anodic polarization, a series of porous silicon layer was prepared by scanning electron microscopy were used to characterize the surface and cross section morphology by scanning linear polarization technique and chronopotentiometry compared monocrystalline silicon electrode and the porous silicon electrode electrochemical behavior , Tafel curves were analyzed before and after the formation of porous silicon and timing potential curve, it gives the porous silicon during the formation of the important electrochemical parameters, such as the corrosion current, open circuit potential, Tafel slope, etc., and its in-depth analysis according to the experimental results, the structural model of monocrystalline silicon electrode / electrolyte interface and the porous silicon electrode / electrolyte interface, and using the model discussed in the electrochemical characteristics of the two electrode interface.

Eight different acids digestion system on a solid waste digestion, determination of copper, nickel, cadmium, chromium and other metal elements by ICP-OES method results showed that nitrate - hydrochloric acid - hydrofluoric acid - perchloric acid method detection system limit of 0.2 ~ 1.5mg / kg, the relative deviation of 1.3% to 4.2% and the recovery was 81.4% ~ 102%, the detection limit, precision and recoveries meet the requirements, to maximize dissolution of metal elements in solid waste.